| Number | 6 |
| Location | Materials Science Laboratory Building R113-C |
| Purpose | 1. Identify nano-level defects in integrated circuits, including particles and residues embedded at the bottom of through holes. 2. Determine the crystalline phase as a function of interface distance 3. Nano grain characteristics: core/shell investigation, agglomeration and annealing effect |
| Personin charge | Xiao, Yuting/Dong, Qihuan 蕭羽婷/董其桓 |
| Contact Email | voxia10@gmail.com / wageniusyne@gmail.com |
| Phone | 03-5715131#35357 |